Measurement results of basic characteristics of electronic module based on two specialized analog integrated circuits depending on different square area silicon detectors using source of 239Pu alpha particles is given. Processing of current pulses typically consists to convert them into a voltage by charge sensitive amplifiers and reduce noise by bandpass filters. Earlier for work with avalanche photodiode we have developed, constructed and tested two electronic modules "CRP-MDL-1" and "CRP-MDL-2". During the measurements was investigated spectrometric channel response on exposure to ionizing radiation from a source of alpha particles 239Pu and test input signals, thus we determined basic technical characteristics including energy resolution and noise characteristics. As a result, research found, that the output signal has the following timings: rise time - 1 us (levels of 0.1-0.9), peak time - 1.4 us, fall time - 1.8 us pulse width - 3.5 us. The conversion factor of module working with silicon detector (area of 1000 mm2 and a capacity 500 pF) consists about 10.6 mV / fC, or 0.47 V / MeV. Integral nonlinearity of spectrometer path is not worse 0.4% in the range from about 0.1 to 3.2 V. The energy resolution was 89.1 keV line of 5157 keV. The experimental studies revealed that using an external low-noise transistors developed module can be used in the construction of standard radiometric paths. It is appropriate to use the developed design-circuit solutions for implementing 4-channel chip for multi-channel radiometric and spectrometric systems.
Keywords: silicon detector, charge sensitive amplifier, spectrometer, radiometric system, ionizing radiation
The features of circuit engineering and results of chip computer simulation which consists of 4-channel operational amplifier (op amp) and 2-channel electrometric voltage follower, designed for pre-processing of sensors signals in high-energy physics are considered.
The characteristic properties of designed op amp are the absence of current source in the input differential stage and the use of parallel high-frequency channel for increasing of the bandwidth and slew rate.
The results of experimental research that have confirmed the low sensitivity of the parameters of designed integrated circuits created on the field programmable gate array "FGPA-1.3" without the horizontal p-n-p transistors to the influence of gamma-irradiation and electrons with energy of 4 MeV are given.
Keywords: operational amplifier, field programmable gate array, voltage follower, sensor, sensing element, radiation resistance.