When modeling the transport of hot carriers in strong electric fields and using various mathematical relationships describing these processes, usually do not take into account inhomogeneities of impurity doping, which affect the field distribution and the density of the output current. In this paper, we calculated the field distribution along the length of the diode chip. In this case, a one-dimensional model and a phenomenological approach to the description of carrier behavior were used. The results obtained allow one to estimate the influence of the inhomogeneity on the operating modes of the Gunn diode and can be used to create models of higher orders.

Keywords: Gunn diode, numerical modeling, heterogeneity doping physical topological model