The paper considers methods of taking into account the energy dependence of the effective mass of hot carriers in the volume of semiconductors of the AIIIBV type for three different cases of dispersion. The classical deviation of the dispersion from the quadratic law, the Kane deviation of the dispersion from the quadratic law and the dependence m (W), connected with the two-valley representation of semiconductors of the AIIIBV type, are analyzed. Energy dependences of the normalized effective mass for the main valley, lateral valley, and total energy are calculated, taking into account the intervalley transition and also the energy dependences of the normalized effective mass calculated by the equations. An estimation of the effect of an external electric field on the average carrier energy taking into account different dispersion mechanisms is made.

Keywords: dispersion characteristic, effective mass, quadratic law, Keynes deviation of dispersion, effect of "weighting" of electrons, energy dependencies, heating effects