Chemical regeneration of impregnating solutions Mn(NO3)2 in the manufacturing of oxide-semicanductor capacitors
Abstract
Chemical regeneration of impregnating solutions Mn(NO3)2 in the manufacturing of oxide-semicanductor capacitors
Incoming article date: 25.02.2016"One of the bottlenecks of the production of oxide-semiconductor capacitors is enough fast aging of impregnating solutions of manganese nitrate used to form the cathode electrode of manganese dioxide. This effect is caused by the formation and accumulation of impurities of oxides and nitrides of manganese in the solution, which leads to a poor-quality cathode coating of manganese dioxide on the tantalum anode and as a result, poor performance capacitors. Fast aging of impregnating solutions of the Mn(NO3)2 solutions leads not only to an increase in the cost of materials, but also significantly increases of the volume of waste. As a solution to this problem in the proposed article discusses aspects of chemical regeneration of contaminated solutions of manganese nitrate, analyzed the possible ways of its realization in relation to the existing production of oxide-semiconductor capacitors."
Keywords: Manganese nitrate, manganese oxides, cathode coating, impregnating solutions, manganese nitrides, manganese oxohydroxide, chemical regeneration.