Research of films reception processes on sapphire for gas sensors
Abstract
Research of films reception processes on sapphire for gas sensors
Incoming article date: 14.03.2016The author describes the technological schemes of films formation on sapphire surface for gas-sensitive sensors with use of laser radiation with wavelength of 1064 nm. It is defined that laser radiation allows to increase productivity at gas-sensitive elements reception, to modify crystal and defective structure of materials, to increase quality of oxide film, reproducibility of film parameters and their stability.
Keywords: sapphire, film, gas-sensitive sensor, laser radiation sensitive element, technological scheme, semiconductor materials