Optimization of the reanodization in the production of tantalum oxide-semiconductor capacitors
Abstract
Optimization of the reanodization in the production of tantalum oxide-semiconductor capacitors
Incoming article date: 02.04.2018A complex of technological operations for the formation of a cathode liner based on manganese dioxide is of particular importance in the production of tantalum oxide-semiconductor capacitors. Electrical characteristics and reliability indicators of capacitors are laid at this stage in their manufacture. In according with the classical technology, the formation of a semiconductor coating of MnO2 on tantalum capacitors is associated with multiple heating of oxidized anodes with the previous impregnation in solutions of manganese nitrate. It has a negative effect on the quality of the Ta2O5-dielectric. To minimize the defect formation in the dielectric, is realized a periodic electrochemical anodization of the tantalum anode in the acetic acid solution by anodic connection of the sections of the capacitors to the direct current source. The authors proposed to modify the process of reanodization of sections of tantalum oxide-semiconductor capacitors by changing the composition of the electrolyte. The results of the investigation of the electrochemical anodizing of a tantalum anode in aqueous solutions of nitric acid and manganese nitrate are presented, the morphology of the obtained coatings, their phase composition, as well as electrical parameters of the sections of capacitors manufactured by the proposed method are analyzed.
Keywords: Tantalum oxide-semiconductor capacitor, reanodization, manganese nitrate, capacitance, leakage current, dielectric loss tangent, electrolyte